Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/1991
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dc.contributor.authorYadav, Sarita-
dc.date.accessioned2022-12-21T17:50:33Z-
dc.date.available2022-12-21T17:50:33Z-
dc.date.issued2022-04-
dc.identifier.urihttp://hdl.handle.net/123456789/1991-
dc.description.abstractThis thesis initially talks of the Hall Effect measurements in Nickel Thin Films(20 nm) at room temperature. A graph of Voltage vs Magnetic Field was plotted and linear and saturation regions were obtained as expected because Nickel is a Ferromagnet. During this process we wanted to figure out that the sample when placed in perpendicular magnetic fields, Is it subject to the dimensions and configuration of the Hall Bar. To see that differ- ent hall bars were designed in ECP and laid on the silicon chip by E-Beam Lithography. We wish to measure 1/f Noise in the Nickel Thin Films at room temperature and expect maximum noise in the transition region from linear to saturation region and relatively less noise in the saturation region. To do Noise Measurements I also made an Instrumentation Amplifier.en_US
dc.language.isoen_USen_US
dc.publisherIISER Mohaien_US
dc.subjectMeasurementsen_US
dc.subjectnickel thinen_US
dc.subjecthall voltageen_US
dc.titleProposed 1/f Noise Measurements in hall voltage for nickel thin filmsen_US
dc.typeThesisen_US
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